The concept of the Field Effect Transistor (FET) was first captured as a patent filed with the Canadian Patent Office by Julius Lilienfeld on October 22, 1925. Over the past century, the development and innovations of the FET have been crucial in enabling modern electronics. To commemorate this, EDS is organizing a series of lectures themed "100 Years of the FET" (FET100), at CAD-TFT 2025.

There will be two distinguished sessions with lectures on various applications of FETs, FET technological review and emerging applications. Participants will gain a deeper understanding of FET technology and its applications, gaining valuable insights for their own research and development fields.