On October 22, 1925, Julius Lilienfeld filed a patent with the Canadian Patent Office that marked the conceptual birth of the Field Effect Transistor (FET). Over the past century, the FET has played a foundational role in the evolution of modern electronics.
To honor this milestone, the lEEE Electron Devices Society (EDS) is pleased to announce the FET100 Commemorative forum, to be held on October 13, 2025, as part of CAD-TFT 2025. Themed “100 Years of the FET" , this special event will feature two distinguished sessions comprising expert lectures on the historical development, current technologies, and emerging applications of FETs.
Attendees will gain in-depth perspectives on the enduring impact and future potential of FET technology offering valuable insights for researchers, engineers, and technologists across a broad range of disciplines.
Ming Liu
Fudan University
China
Samar Saha
Prospicient Devices
CA, USA
Cor Claeys
IMEC
Belgium
Arokia Nathan
Darwin College,Cambridge
Shandong U,China
Ling Li
Institute of Microelectronics Chinese Academy of Sciences
Beijing, China
Benjamin Iniguez
Universitat Rovira I Virgili
Tarragona, Spain
Xiaojun Guo
Shanghai Jiao Tong University
China
Guanhua Yang
Institute of Microelectronics Chinese Academy of Sciences
Beijing China
Jun Yu
Shandong University
China
Chen Jiang
Tsinghua University
China
Yuan Li
Shandong University
China
Panel Discussion Moderator: Ling Li100 Years of FET History and Future Directions
Panel: Samar Saha,Ming Liu,Benjamin Iniguez,Xiaojun Guo, Cor Claeys
Closing remarks: Arokia Nathan,EDS President-Elect